The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Jul. 13, 2011
Yoshimi Kawanami, Hitachinaka, JP;
Shinichi Matsubara, Chofu, JP;
Hironori Moritani, Hitachinaka, JP;
Noriaki Arai, Hitachinaka, JP;
Hiroyasu Shichi, Tokyo, JP;
Tomihiro Hashizume, Hatoyama, JP;
Hiroyasu Kaga, Mito, JP;
Norihide Saho, Tsuchiura, JP;
Hiroyuki Muto, Hitachinaka, JP;
Yoichi Ose, Mito, JP;
Yoshimi Kawanami, Hitachinaka, JP;
Shinichi Matsubara, Chofu, JP;
Hironori Moritani, Hitachinaka, JP;
Noriaki Arai, Hitachinaka, JP;
Hiroyasu Shichi, Tokyo, JP;
Tomihiro Hashizume, Hatoyama, JP;
Hiroyasu Kaga, Mito, JP;
Norihide Saho, Tsuchiura, JP;
Hiroyuki Muto, Hitachinaka, JP;
Yoichi Ose, Mito, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a cone shape having a single atom at the top, and such that the extraction voltage in the case of ionizing helium gas by the single atom is set to 10 kV or more.