The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Jul. 22, 2013
United Microelectronics Corp., Hsin-Chu, TW;
Kuo-Hsiung Huang, Hsinchu County, TW;
Chun-Mao Chiou, Chiayi County, TW;
Hsin-Yu Chen, Nantou County, TW;
Yu-Han Tsai, Kaohsiung, TW;
Ching-Li Yang, Ping-Tung Hsien, TW;
Home-Been Cheng, Keelung, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The present invention relates to a through silicon via (TSV). The TSV is disposed in a substrate including a via opening penetrating through a first surface and a second surface of the substrate. The TSV includes an insulation layer, a barrier layer, a buffer layer and a conductive electrode. The insulation layer is disposed on a surface of the via opening. The barrier layer is disposed on a surface of the insulation layer. The buffer layer is disposed on a surface of the barrier layer. The conductive electrode is disposed on a surface of the buffer layer and a remainder of the via opening is completely filled with the conductive electrode. A portion of the buffer layer further covers a surface of the conductive electrode at a side of the second surface and said portion is level with the second surface.