The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Dec. 11, 2011
Shifang LI, Pleasanton, CA (US);
Manuel Madriaga, San Jose, CA (US);
Shifang Li, Pleasanton, CA (US);
Manuel Madriaga, San Jose, CA (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Provided is a method for controlling a fabrication cluster comprising an optical metrology tool and an optical metrology model including a profile model of a sample structure, the optical metrology tool having an illumination beam, the illumination beam having a range of angles of incidence and azimuth angles. A library comprising Jones and/or Mueller matrices and/or components (JMMOC) and corresponding profile parameters is generated using ray tracing and a selected range of beam propagation parameters and can be used to train a machine learning system (MLS). A regenerated simulated diffraction signal is obtained with a regenerated JMMOC using the library or MLS, integrated for all the rays of the optical metrology model. One or more profile parameters are determined from the best match regenerated simulated diffraction signal. At least one process parameter of the fabrication cluster is adjusted based on the determined one or more profile parameters.