The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Aug. 30, 2012
Hiroshi Kanno, Mie-ken, JP;
Yoichi Minemura, Mie-ken, JP;
Mizuki Kaneko, Kanagawa-ken, JP;
Tomonori Kurosawa, Kanagawa-ken, JP;
Takafumi Shimotori, Kanagawa-ken, JP;
Takayuki Tsukamoto, Mie-ken, JP;
Hiroshi Kanno, Mie-ken, JP;
Yoichi Minemura, Mie-ken, JP;
Mizuki Kaneko, Kanagawa-ken, JP;
Tomonori Kurosawa, Kanagawa-ken, JP;
Takafumi Shimotori, Kanagawa-ken, JP;
Takayuki Tsukamoto, Mie-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a plurality of memory cells, a plurality of wires, and a control circuit. The control circuit allows a first current to change a state to flow on a selected cell by applying a first potential difference between a pair of wires that sandwich the selected cell selected from the plurality of memory cells with respect to the semiconductor substrate vertically, and allows a second current lower than the first current to flow on an non-selected cell in the same direction as the direction of the first current by applying a second potential difference between a pair of wires that sandwich the non-selected cell connected to a wire shared with the selected cell on a different layer from the selected cell.