The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Aug. 04, 2009
Applicants:
Hirosato Ochimizu, Kawasaki, JP;
Atsuhiro Tsukune, Kawasaki, JP;
Hiroshi Kudo, Kawasaki, JP;
Inventors:
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53295 (2013.01); H01L 23/53238 (2013.01); H01L 21/76867 (2013.01); H01L 21/76831 (2013.01); H01L 21/76873 (2013.01); H01L 21/76864 (2013.01); H01L 21/76807 (2013.01); H01L 21/76843 (2013.01); H01L 23/528 (2013.01); H01L 23/5329 (2013.01);
Abstract
A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.