The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2014

Filed:

May. 04, 2012
Applicants:

Leland Chang, New York, NY (US);

Chung-hsun Lin, White Plains, NY (US);

Shih-hsien Lo, Mount Kisco, NY (US);

Jeffrey W. Sleight, Ridgefield, CT (US);

Inventors:

Leland Chang, New York, NY (US);

Chung-Hsun Lin, White Plains, NY (US);

Shih-Hsien Lo, Mount Kisco, NY (US);

Jeffrey W. Sleight, Ridgefield, CT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

A static random access memory fabrication array includes at least one p-type field effect transistor, including a gate stack and isolating spacers forming a gate having a gate length Lgate and an effective gate length, Leff and a source and drain region adjacent the gate stack, wherein the source and drain regions are formed from a low extension dose implant that decreases a difference between Lgate and Leff.


Find Patent Forward Citations

Loading…