The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Aug. 30, 2011
Erdem Arkun, San Carlos, CA (US);
Rytis Dargis, Fremont, CA (US);
Andrew Clark, Los Altos, CA (US);
Michael Lebby, Apache Junction, AZ (US);
Erdem Arkun, San Carlos, CA (US);
Rytis Dargis, Fremont, CA (US);
Andrew Clark, Los Altos, CA (US);
Michael Lebby, Apache Junction, AZ (US);
Translucent, Inc., Palo Alto, CA (US);
Abstract
A silicon-on-insulator (SOI) substrate structure and method of fabrication including a single crystal silicon substrate, a layer of single crystal rare earth oxide formed on the substrate, a layer of engineered single crystal silicon formed on the layer of single crystal rare earth oxide, and a single crystal insulator layer of IIIONformed on the engineered single crystal silicon layer. In some embodiments the III material in the insulator layer includes more than on III material. In a preferred embodiment the single crystal rare earth oxide includes GdOand the single crystal insulator layer of IIIONincludes one of AlONand AlGaON.