The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Apr. 16, 2012
Rustam Yevtukhov, Briarwood, NY (US);
Boris L. Druz, Brooklyn, NY (US);
Viktor Kanarov, Bellmore, NY (US);
Alan V. Hayes, Great Neck, NY (US);
Rustam Yevtukhov, Briarwood, NY (US);
Boris L. Druz, Brooklyn, NY (US);
Viktor Kanarov, Bellmore, NY (US);
Alan V. Hayes, Great Neck, NY (US);
Veeco Instruments, Inc., Plainview, NY (US);
Abstract
Ion sources and methods for generating an ion bean with a controllable ion current density distribution. The ion source includes a discharge chamber having an optical grid position proximate at a first end and a re-entrant vessel positioned proximate a second end that opposes the first end. A plasma shaper extends from the re-entrant vessel and into the plasma discharge chamber. A position of the plasma shaper is adjustable relative to the grid-based ion optic such that the plasma shaper may operably change a plasma density distribution within the discharge chamber.