The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Mar. 16, 2010
Han-guan Chew, Singapore, SG;
Ming Zhu, Singapore, SG;
Lee-wee Teo, Singapore, SG;
Harry Hak-lay Chuang, Hsin-Chu, TW;
Yi-ren Chen, Guishan Township, TW;
Han-Guan Chew, Singapore, SG;
Ming Zhu, Singapore, SG;
Lee-Wee Teo, Singapore, SG;
Harry Hak-Lay Chuang, Hsin-Chu, TW;
Yi-Ren Chen, Guishan Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a gate structure on the substrate, the gate structure including a dummy gate, removing the dummy gate from the gate structure thereby forming a trench, forming a work function metal layer partially filling the trench, forming a fill metal layer filling a remainder of the trench, performing a chemical mechanical polishing (CMP) to remove portions of the metal layers outside the trench, and implanting Si, C, or Ge into a remaining portion of the fill metal layer.