The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Dec. 14, 2010
Applicants:

Walid M. Hafez, Portland, OR (US);

Anisur Rahman, Hillsboro, OR (US);

Inventors:

Walid M. Hafez, Portland, OR (US);

Anisur Rahman, Hillsboro, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/423 (2006.01); G11C 16/04 (2006.01); H01L 29/792 (2006.01); H01L 49/02 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 29/4234 (2013.01); G11C 16/0466 (2013.01); H01L 28/40 (2013.01); H01L 29/513 (2013.01); H01L 21/28282 (2013.01);
Abstract

A non-volatile storage element and a method of forming the storage element. The non-volatile storage element comprises: a first electrode including a first material having a first work function; a second electrode including a second material having a second work function higher than the first work function; a first dielectric disposed between the first electrode and the second electrode, the first dielectric having a first bandgap; a second dielectric disposed between the first dielectric and the second electrode, the second dielectric having a second bandgap wider than the first bandgap and being disposed such that a quantum well is created in the first dielectric; and a third dielectric disposed between the first electrode and the first dielectric, the third dielectric being thinner than the second dielectric and having a third bandgap wider than the first bandgap.


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