The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Dec. 26, 2012
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chung-Fu Chang, Tainan, TW;

Yu-Hsiang Hung, Tainan, TW;

Chia-Jong Liu, Ping-Tung County, TW;

Yen-Liang Wu, Taipei, TW;

Pei-Yu Chou, Tainan, TW;

Home-Been Cheng, Keelung, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor structure includes a gate, a dual spacer and two recesses. The gate is located on a substrate. The dual spacer is located on the substrate beside the gate. The recesses are located in the substrate and the dual spacers, wherein the sidewall of each of the recesses next to the gate has a lower tip and an upper tip, and the lower tip is located in the substrate while the upper tip is an acute angle located in the dual spacer and close to the substrate. The present invention also provides a semiconductor process formed said semiconductor structure.


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