The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Aug. 06, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chih-Hsiang Huang, Zhubei, TW;
Feng-Cheng Yang, Zhudong Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a gate over a substrate. The method includes performing a first implantation process to form a first doped region in the substrate, the first doped region being adjacent to the gate. The method includes performing a second implantation process to form a second doped region in the substrate, the second doped region being formed farther away from the gate than the first doped region, the second doped region having a higher doping concentration level than the first doped region. The method includes removing portions of the first and second doped regions to form a recess in the substrate. The method includes epitaxially growing a third doped region in the recess, the third doped region having a higher doping concentration level than the second doped region.