The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Jun. 20, 2011
Applicants:
Yong-ho Jeon, Hwaseong-si, KR;
Dong-hyun Kim, Hwaseong-si, KR;
Je-woo Han, Hwaseong-si, KR;
Kyoung-sub Shin, Seongnam-si, KR;
Inventors:
Yong-Ho Jeon, Hwaseong-si, KR;
Dong-Hyun Kim, Hwaseong-si, KR;
Je-Woo Han, Hwaseong-si, KR;
Kyoung-Sub Shin, Seongnam-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30655 (2013.01); H01L 21/76898 (2013.01);
Abstract
A first gas for plasma etch and a second gas for plasma deposition are introduced onto a semiconductor substrate, the semiconductor substrate including a mask pattern. A flow rate of the first and second gases is periodically changed within a range of flow rates during a process cycle, such that a plasma etch process and a plasma deposition process are performed together to form an opening in the semiconductor substrate.