The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2014

Filed:

Dec. 18, 2009
Applicants:

Joy Cheng, San Jose, CA (US);

William D. Hinsberg, Fremont, CA (US);

Ho-cheol Kim, San Jose, CA (US);

Young-hye NA, San Jose, CA (US);

Daniel Paul Sanders, San Jose, CA (US);

Linda Karin Sundberg, Los Gatos, CA (US);

Hoa D. Truong, San Jose, CA (US);

Gregory Michael Wallraff, San Jose, CA (US);

Atsuko Ito, San Jose, CA (US);

Inventors:

Joy Cheng, San Jose, CA (US);

William D. Hinsberg, Fremont, CA (US);

Hiroshi Ito, San Jose, CA (US);

Ho-Cheol Kim, San Jose, CA (US);

Young-Hye Na, San Jose, CA (US);

Daniel Paul Sanders, San Jose, CA (US);

Linda Karin Sundberg, Los Gatos, CA (US);

Hoa D. Truong, San Jose, CA (US);

Gregory Michael Wallraff, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 3/10 (2006.01); G03F 7/16 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01); G03F 7/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.


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