The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2014

Filed:

Feb. 22, 2008
Applicants:

Jin Amanokura, Hitachi, JP;

Takafumi Sakurada, Hitachi, JP;

Sou Anzai, Mito, JP;

Takashi Shinoda, Hitachi, JP;

Shigeru Nobe, Hitachi, JP;

Inventors:

Jin Amanokura, Hitachi, JP;

Takafumi Sakurada, Hitachi, JP;

Sou Anzai, Mito, JP;

Takashi Shinoda, Hitachi, JP;

Shigeru Nobe, Hitachi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/02 (2006.01); C23F 1/18 (2006.01); C23F 1/26 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); C23F 1/18 (2013.01); C23F 1/26 (2013.01); H01L 21/30625 (2013.01);
Abstract

The present invention relates to a metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, and water, wherein the abrasive grains contain two or more abrasive grain species different from each other in average secondary particle diameter. Using the metal polishing slurry of the present invention, a metal polishing slurry can be obtained which gives a large polishing rate of an interlayer dielectric layer, and is high in the flatness of the polished surface. This metal polishing slurry can provide suitable method for a semiconductor device which is excellent in being made finer and thinner and in dimension precision and in electric characteristics, is high in reliability, and can attain a decrease in costs.


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