The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Feb. 04, 2010
Ryoichi Yoshida, Nirasaki, JP;
Tetsuo Yoshida, Nirasaki, JP;
Michishige Saito, Nirasaki, JP;
Toshikatsu Wakaki, Nirasaki, JP;
Hayato Aoyama, Nirasaki, JP;
Akira Obi, Nirasaki, JP;
Hiroshi Suzuki, Nirasaki, JP;
Ryoichi Yoshida, Nirasaki, JP;
Tetsuo Yoshida, Nirasaki, JP;
Michishige Saito, Nirasaki, JP;
Toshikatsu Wakaki, Nirasaki, JP;
Hayato Aoyama, Nirasaki, JP;
Akira Obi, Nirasaki, JP;
Hiroshi Suzuki, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A plasma etching method by using a plasma etching apparatus having a depressurizable processing chamber; a lower electrode for mounting thereon a substrate to be processed in the processing chamber; an upper electrode facing the lower electrode in the processing chamber with a plasma generation region formed therebetween; a radio frequency power supply unit for applying a radio frequency power between the upper electrode and the lower electrode to thereby form a radio frequency electric field in the plasma generation region, the method comprising: supplying a first gas including etchant gas to an upper gas inlet to introduce the first gas through the upper electrode into the plasma generation region; and feeding a second gas including dilution gas to a side gas inlet to introduce the second gas through a sidewall of the processing chamber into the plasma generation region.