The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2014

Filed:

Apr. 24, 2009
Applicants:

Takao Abe, Annaka, JP;

Kouzou Yokota, Annaka, JP;

Kouji Mizuishi, Annaka, JP;

Inventors:

Takao Abe, Annaka, JP;

Kouzou Yokota, Annaka, JP;

Kouji Mizuishi, Annaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/02 (2006.01); C30B 15/14 (2006.01); C30B 29/06 (2006.01); C30B 15/00 (2006.01); C30B 35/00 (2006.01);
U.S. Cl.
CPC ...
C30B 15/14 (2013.01); C30B 29/06 (2013.01); C30B 15/00 (2013.01); C30B 35/00 (2013.01);
Abstract

The present invention is a single-crystal manufacturing apparatus based on the Czochralski method having a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are placeable in the multipurpose chamber respectively. As a result, there is provided a single-crystal manufacturing apparatus that enables, in manufacture of a single crystal of a large diameter, e.g., approximately 200 mm or more, an operating rate of the single-crystal manufacturing apparatus and productivity of the single crystal to be improved.


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