The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2014

Filed:

Mar. 29, 2010
Applicants:

Kazuyoshi Matsuzaki, Nirasaki, JP;

Sumie Nagaseki, Nirasaki, JP;

Inventors:

Kazuyoshi Matsuzaki, Nirasaki, JP;

Sumie Nagaseki, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 19/00 (2011.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67109 (2013.01); H01L 21/67248 (2013.01); H01J 37/32522 (2013.01); H01J 37/32623 (2013.01); H01J 37/32449 (2013.01); H01J 2237/2001 (2013.01); H01L 21/67253 (2013.01);
Abstract

A semiconductor fabrication apparatus includes a semiconductor wafer mounting table having a cavity therein; and a nozzle which jets a liquefied temperature adjustment medium having a temperature equal to or less than a targeted temperature to an inner wall of the cavity in order to adjust a temperature of the semiconductor wafer mounting table to the targeted temperature. The semiconductor fabrication apparatus further includes a pressure detecting unit for detecting an internal pressure of the cavity; and a vacuum pump which discharges gas within the cavity such that a pressure detected by the pressure detecting unit becomes equal to or more than a saturated vapor pressure related to the temperature of the temperature adjustment medium jetted from the nozzle and equal to or less than a saturated vapor pressure related to the targeted temperature.


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