The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Jan. 03, 2013
Amazing Mircoelectronic Corp., New Taipei, TW;
James Jeng-Jie Peng, Guanyin Township, Taoyuan County, TW;
Chih-Hao Chen, Taipei, TW;
Ryan Hsin-Chin Jiang, Taipei, TW;
Amazing Microelectronics Corp., New Taipei, TW;
Abstract
A high voltage open-drain electrostatic discharge (ESD) protection device is disclosed, which comprises a high-voltage n-channel metal oxide semiconductor field effect transistor (HV NMOSFET) coupled to a high-voltage pad and a low-voltage terminal and receiving a high voltage on the high-voltage pad to operate in normal operation. The high-voltage pad and the HV NMOSFET are further coupled to a high-voltage ESD unit blocking the high voltage, and receiving a positive ESD voltage on the high-voltage pad to bypass an ESD current when an ESD event is applied to the high-voltage pad. The high-voltage ESD unit and the low-voltage terminal are coupled to a power clamp unit, which receives the positive ESD voltage via the high-voltage ESD unit to bypass the ESD current.