The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Dec. 22, 2011
Shou Shu LU, Kaohsiung, TW;
Hsun-ying Huang, Tainan, TW;
I-chang Lin, Tainan, TW;
Chia-chi Hsiao, Changhua County, TW;
Yung-cheng Chang, Zhubei, TW;
Shou Shu Lu, Kaohsiung, TW;
Hsun-Ying Huang, Tainan, TW;
I-Chang Lin, Tainan, TW;
Chia-Chi Hsiao, Changhua County, TW;
Yung-Cheng Chang, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method also includes performing an ion implantation process to the back surface of the silicon substrate and performing a green laser annealing process to the implanted back surface of the silicon substrate. The green laser annealing process uses an annealing temperature greater than or equal to about 1100° C. for a duration of about 100 to about 400 nsec. After performing the green laser annealing process, a silicon polishing process is performed on the back surface of the silicon substrate.