The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Jan. 31, 2013
Applicant:
Globalfoundries, Inc., Grand Cayman, KY;
Inventors:
Nicholas LiCausi, Watervliet, NY (US);
Jody Fronheiser, Delmar, NY (US);
Errol Todd Ryan, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES, Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01);
Abstract
Methods are provided for fabricating integrated circuits. In accordance with one embodiment, the method includes forming a portion of a semiconductor substrate at least partially bounded by a confinement isolation material. A liner dielectric is formed overlying the confinement isolation material and is treated to passivate a surface thereof. An epitaxial layer of semiconductor material is then grown overlying the portion of semiconductor substrate.