The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2014

Filed:

Dec. 05, 2011
Applicants:

Kuo-yuan Lee, Kaohsiung, TW;

Yung-hsiang Chen, Kaohsiung, TW;

Wen-chun Chiu, Kaohsiung, TW;

Inventors:

Kuo-Yuan Lee, Kaohsiung, TW;

Yung-Hsiang Chen, Kaohsiung, TW;

Wen-Chun Chiu, Kaohsiung, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 25/065 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 25/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 21/565 (2013.01); H01L 2924/01059 (2013.01); H01L 2224/48479 (2013.01); H01L 25/0657 (2013.01); H01L 2224/48227 (2013.01); H01L 2924/01005 (2013.01); H01L 24/73 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01029 (2013.01); H01L 2224/32225 (2013.01); H01L 24/45 (2013.01); H01L 2224/45144 (2013.01); H01L 24/04 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/83191 (2013.01); H01L 21/561 (2013.01); H01L 2224/85013 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/2919 (2013.01); H01L 2924/0665 (2013.01); H01L 2224/32145 (2013.01); H01L 2225/06565 (2013.01); H01L 2224/8592 (2013.01); H01L 2924/01033 (2013.01); H01L 24/49 (2013.01); H01L 2224/06135 (2013.01); H01L 2225/0651 (2013.01); H01L 2224/85951 (2013.01); H01L 2924/014 (2013.01); H01L 24/97 (2013.01); H01L 24/83 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/73215 (2013.01); H01L 2924/15311 (2013.01); H01L 2224/45147 (2013.01); H01L 25/50 (2013.01); H01L 24/48 (2013.01); H01L 24/85 (2013.01); H01L 2224/85186 (2013.01); H01L 24/32 (2013.01); H01L 23/3128 (2013.01); H01L 2224/06136 (2013.01); H01L 2924/01082 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/48471 (2013.01); H01L 2224/838 (2013.01); H01L 24/92 (2013.01); H01L 2224/97 (2013.01); H01L 24/06 (2013.01); H01L 2924/01079 (2013.01); H01L 2224/48465 (2013.01);
Abstract

A multi-chip stacking method to reduce voids between stacked chips is revealed. A first chip is disposed on a substrate, and a plurality of first bonding wires are formed by wire bonding to electrically connect the first chip and the substrate. A second chip is disposed on an active surface of the first chip where a FOW (film over wire) adhesive is formed on a back surface of the second chip. The FOW adhesive partially encapsulates the first bonding wires and adheres to the active surface of the first chip. Then, the substrate is placed in a pressure oven to provide a positive pressure greater than one atm during thermally curing the FOW adhesive with exerted pressures. Accordingly, voids can be reduced inside the FOW adhesive during the multi-chip stacked processes where issues of poor adhesion and popcorn between chips can be avoided.


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