The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2014

Filed:

Sep. 14, 2012
Applicants:

Youichi Ohsawa, Joetsu, JP;

Masaki Ohashi, Joetsu, JP;

Takeshi Sasami, Joetsu, JP;

Jun Hatakeyama, Joetsu, JP;

Inventors:

Youichi Ohsawa, Joetsu, JP;

Masaki Ohashi, Joetsu, JP;

Takeshi Sasami, Joetsu, JP;

Jun Hatakeyama, Joetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/028 (2006.01); G03F 7/039 (2006.01); G03F 7/26 (2006.01); G03F 7/027 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/027 (2013.01); G03F 7/028 (2013.01); G03F 7/26 (2013.01); G03F 7/039 (2013.01); G03F 7/004 (2013.01); G03F 7/20 (2013.01); Y10S 430/109 (2013.01); Y10S 430/122 (2013.01); Y10S 430/126 (2013.01);
Abstract

A chemically amplified positive resist composition comprising (A) a triarylsulfonium salt of 2,3,3,3-tetrafluoro-2-(1,1,2,2,3,3,3-heptafluoropropoxy)propionic acid, (B) an acid generator, (C) a base resin, and (D) an organic solvent is suited for ArF immersion lithography. The sulfonium salt is highly hydrophobic and little leached out in immersion water. By virtue of controlled acid diffusion, a pattern profile with high resolution can be constructed.


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