The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Jan. 14, 2009
Applicant:
Kelvin Kyaw Zin, Albany, NY (US);
Inventor:
Kelvin Kyaw Zin, Albany, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01);
Abstract
A method for transferring a feature pattern to a thin film on a substrate is described. The method comprises disposing a substrate comprising one or more mask layers overlying a thin film in a plasma processing system, and forming a feature pattern in the one or more mask layers. The method further comprises transferring the feature pattern in the one or more mask layers to the thin film by: performing a first plasma etching process at a first pressure less than about 80 mtorr, and performing a second plasma etching process at a second pressure greater than about 80 mtorr.