The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Aug. 31, 2011
Taisuke Sato, Kanagawa-ken, JP;
Naoharu Sugiyama, Kanagawa-ken, JP;
Tomonari Shioda, Kanagawa-ken, JP;
Toshiki Hikosaka, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Taisuke Sato, Kanagawa-ken, JP;
Naoharu Sugiyama, Kanagawa-ken, JP;
Tomonari Shioda, Kanagawa-ken, JP;
Toshiki Hikosaka, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.