The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2014

Filed:

Feb. 17, 2010
Applicants:

Naotaka Noro, Nirasaki, JP;

Takahiro Miyahara, Nirasaki, JP;

Inventors:

Naotaka Noro, Nirasaki, JP;

Takahiro Miyahara, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 25/02 (2006.01); C30B 25/20 (2006.01); C30B 29/06 (2006.01); C30B 25/12 (2006.01); C30B 25/08 (2006.01);
U.S. Cl.
CPC ...
C30B 25/02 (2013.01); C30B 25/20 (2013.01); C30B 29/06 (2013.01); C30B 25/12 (2013.01); C30B 25/08 (2013.01);
Abstract

A method for using a silicon film formation apparatus includes performing a pre-coating process to cover a reaction tube with a silicon coating film, an etching process to etch natural oxide films on product target objects, a silicon film formation process to form a silicon product film on the product target objects, and a cleaning process to etch silicon films on the reaction tube, in this order. The pre-coating process includes supplying a silicon source gas into the reaction tube from a first supply port having a lowermost opening at a first position below the process field, while exhausting gas upward from inside the reaction tube. The etching process includes supplying an etching gas into the reaction tube from a second supply port having a lowermost opening between the process field and the first position, while exhausting gas upward from inside the reaction tube by the exhaust system.


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