The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2014

Filed:

Aug. 30, 2013
Applicant:

Chipbond Technology Corporation, Hsinchu, TW;

Inventors:

Chin-Tang Hsieh, Kaohsiung, TW;

Shyh-Jen Guo, Hsinchu, TW;

You-Ming Hsu, Kaohsiung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 29/06 (2006.01); H01L 23/00 (2006.01); H01L 23/28 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 23/28 (2013.01); H01L 23/53295 (2013.01);
Abstract

A semiconductor structure having a first corner includes a carrier, a first protective layer, a second protective layer, and a third protective layer. The carrier comprises a carrier surface having a protection-layered disposing zone. The first protective layer comprises a first surface having a first disposing zone, a first anti-stress zone and a first exposing zone, the first anti-stress zone is located at a corner of the first disposing zone, the second protective layer is disposed at the first disposing zone. The second protective layer comprises a second surface having a second disposing zone, a second anti-stress zone and a second exposing zone, the second anti-stress zone is located at a corner of the second disposing zone. The first anti-stress zone and the second anti-stress zone are located at the first corner. An area of the first anti-stress zone is not smaller than that of the second anti-stress zone.


Find Patent Forward Citations

Loading…