logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8796805 B1

PDFFull Text
Date of Patent:
Aug. 05, 2014

Filed:

Sep. 05, 2012

Multiple metal film stack in bsi chips

Applicants:

Shyh-fann Ting, Kaohsiung, TW;

Jiech-fun LU, Madou Township, TW;

Ming-i Wang, Tainan, TW;

Yeur-luen Tu, Taichung, TW;

Ching-chun Wang, Tainan, TW;

Inventors:

Shyh-Fann Ting, Kaohsiung, TW;

Jiech-Fun Lu, Madou Township, TW;

Ming-I Wang, Tainan, TW;

Yeur-Luen Tu, Taichung, TW;

Ching-Chun Wang, Tainan, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater and Matsil, L.L.P.

Primary Examiner:

William D Coleman

Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 21/00 (2006.01); H01L 27/146 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1464 (2013.01); H01L 21/76838 (2013.01);
Abstract

A method includes forming an opening extending from a back surface of a semiconductor substrate to a metal pad on a front side of the semiconductor substrate, and forming a first conductive layer including a first portion overlapping active image sensors in the semiconductor substrate, a second portion overlapping black reference image sensors in the semiconductor substrate, and a third portion in the opening to contact the metal pad. A second conductive layer is formed over and contacting the first conductive layer. A first patterning step is performed to remove the first and the second portions of the second conductive layer, wherein the first conductive layer is used as an etch stop layer. A second patterning step is performed to remove a portion of the first portion of the first conductive layer. The second and the third portions of the first conductive layer remain after the second patterning step.

Find Patent Forward Citations

Ting, Shyh-Fann. (2014). Multiple metal film stack in bsi chips (U.S. Patent No. 8796805). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8796805

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…