The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Apr. 26, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yu-Lien Huang, Jhubei, TW;
Tung Ying Lee, Hsin-Chu, TW;
Chung-Hsien Chen, Taipei, TW;
Chi-Wen Liu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A device includes a substrate, insulation regions extending into the substrate, and a semiconductor fin higher than top surfaces of the insulation regions. The semiconductor fin has a first lattice constant. A semiconductor region includes sidewall portions on opposite sides of the semiconductor fin, and a top portion over the semiconductor fin. The semiconductor region has a second lattice constant different from the first lattice constant. A strain buffer layer is between and contacting the semiconductor fin and the semiconductor region. The strain buffer layer includes an oxide.