The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Jan. 24, 2011
Hakeem B. S. Akinmade-yusuff, Beacon, NY (US);
Samuel Sung Shik Choi, Beacon, NY (US);
Edward R. Engbrecht, Poughkeepsie, NY (US);
John A. Fitzsimmons, Poughkeepsie, NY (US);
Hakeem B. S. Akinmade-Yusuff, Beacon, NY (US);
Samuel Sung Shik Choi, Beacon, NY (US);
Edward R. Engbrecht, Poughkeepsie, NY (US);
John A. Fitzsimmons, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method and structure for transferring a lithographic pattern into a substrate includes forming a dielectric hardmask layer over a dielectric substrate. A metal hardmask layer is formed over the dielectric hardmask layer. A protective capping hardmask layer or capping film is formed over the metal hardmask layer, and a lithographic structure for pattern transfer is formed over the capping layer. A pattern is transferred into the dielectric substrate using the defined lithographic structure. The capping hardmask layer can be removed during subsequent processing.