The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Oct. 25, 2010
Edward E. Jones, Woodbury, CT (US);
Sharad N. Yedave, Danbury, CT (US);
Ying Tang, Brookfield, CT (US);
Barry Lewis Chambers, Midlothian, VA (US);
Robert Kaim, Brookline, MA (US);
Joseph D. Sweeney, Winsted, CT (US);
Oleg Byl, Southbury, CT (US);
Peng Zou, Ridgefield, CT (US);
Edward E. Jones, Woodbury, CT (US);
Sharad N. Yedave, Danbury, CT (US);
Ying Tang, Brookfield, CT (US);
Barry Lewis Chambers, Midlothian, VA (US);
Robert Kaim, Brookline, MA (US);
Joseph D. Sweeney, Winsted, CT (US);
Oleg Byl, Southbury, CT (US);
Peng Zou, Ridgefield, CT (US);
Advanced Technology Materials, Inc., Danbury, CT (US);
Abstract
An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.