The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8791027 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 29, 2014

Filed:

Jun. 04, 2010
Applicants:

Naoyuki Kofuji, Tama, JP;

Hideo Miura, Sendai, JP;

Inventors:

Naoyuki Kofuji, Tama, JP;

Hideo Miura, Sendai, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A problem of a resist mask collapse due to a plasma process is solved. In a method of manufacturing a semiconductor device including steps of a plasma process to a sample having a mask made of an organic material, the plasma process includes a first step of a plasma process under a gas containing any of fluorine, oxygen, or nitrogen, or containing all of them, and a second step of the plasma process under a gas containing a rare gas without containing any of fluorine, oxygen, and nitrogen, and the first step and the second step are repeated.


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Kofuji, Naoyuki. (2014). Method of manufacturing semiconductor device (U.S. Patent No. 8791027). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8791027

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