The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2014
Filed:
Aug. 19, 2010
Yong-kuk Jeong, Gyeonggi-do, KR;
Laegu Kang, Hopewell Junction, NY (US);
Kim Nam Sung, Beacon, NY (US);
Dae-won Yang, Hopewell Junction, NY (US);
Yong-Kuk Jeong, Gyeonggi-do, KR;
Laegu Kang, Hopewell Junction, NY (US);
Kim Nam Sung, Beacon, NY (US);
Dae-won Yang, Hopewell Junction, NY (US);
Samsung Electronics Co., Ltd., , KR;
International Business Machines Corporation, Armonk, NY (US);
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Methods of forming integrated circuit devices include forming a PMOS transistor having a SiGe channel region therein and then exposing at least a portion of the PMOS transistor to a hydrogen plasma. A tensile stress layer may be formed on the PMOS transistor. The exposing step may include exposing source and drain regions of the PMOS transistor to the hydrogen plasma.