The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2014

Filed:

Jul. 10, 2013
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Shajan Mathew, Singapore, SG;

Purakh Raj Verma, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 29/1095 (2013.01);
Abstract

A method of forming a device is disclosed. A substrate defined with a device region is provided. A buried doped region is formed in the substrate in the device region. A gate is formed in a trench in the substrate in the device region. A channel of the device is disposed on a sidewall of the trench. The buried doped region is disposed below the gate. A distance from the buried doped region to the channel is a drift length Lof the device. A surface doped region is formed adjacent to the gate.


Find Patent Forward Citations

Mathew, Shajan. (2014). Trench transistor (U.S. Patent No. 8786013). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8786013

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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