The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Sep. 29, 2010
Applicants:
Tseng Chin Luo, Hsinchu, TW;
Chu Fu Chen, Zhubei, TW;
Min-tar Liu, Jhubei, TW;
Yuan-yao Chang, Fengshan, TW;
Inventors:
Tseng Chin Luo, Hsinchu, TW;
Chu Fu Chen, Zhubei, TW;
Min-Tar Liu, Jhubei, TW;
Yuan-Yao Chang, Fengshan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); G01R 31/3187 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of measuring a parameter of a device in a circuit includes providing a device under test (DUT). The DUT includes a metal oxide semiconductor (MOS) transistor having a gate, a source, and a drain coupled to a first voltage supply node. The method further includes coupling a constant current source to the source of the transistor, coupling an operational amplifier to the transistor, and measuring a parameter of the transistor.