The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Dec. 12, 2011
Kiwamu Sakuma, Yokohama, JP;
Atsuhiro Kinoshita, Kamakura, JP;
Masahiro Kiyotoshi, Yokkaichi, JP;
Daisuke Hagishima, Kawasaki, JP;
Koichi Muraoka, Sagamihara, JP;
Kiwamu Sakuma, Yokohama, JP;
Atsuhiro Kinoshita, Kamakura, JP;
Masahiro Kiyotoshi, Yokkaichi, JP;
Daisuke Hagishima, Kawasaki, JP;
Koichi Muraoka, Sagamihara, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a nonvolatile semiconductor memory includes first to n-th (n is a natural number not less than 2) semiconductor layers in a first direction and extend in a second direction, and the semiconductor layers having a stair case pattern in a first end of the second direction, a common semiconductor layer connected to the first to n-th semiconductor layers commonly in the first end of the second direction, first to n-th layer select transistors which are provided in order from the first electrode side between the first electrode and the first to n-th memory strings, and first to n-th impurity regions which make the i-th layer select transistor (i is one of 1 to n) a normally-on state in the first end of the second direction of the i-th semiconductor layer.