The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Jan. 22, 2010
Yu-fong Huang, Hsinchu, TW;
Miao-chih Hsu, Hsinchu, TW;
Kuan-fu Chen, Hsinchu, TW;
Tzung-ting Han, Hsinchu, TW;
Yu-Fong Huang, Hsinchu, TW;
Miao-Chih Hsu, Hsinchu, TW;
Kuan-Fu Chen, Hsinchu, TW;
Tzung-Ting Han, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A memory device is provided, including a substrate, a conductive layer, a charge storage layer, a plurality of isolation structures, a plurality of first doped regions, and a plurality of second doped regions. The substrate has a plurality of trenches. The conductive layer is disposed on the substrate and fills the trenches. The charge storage layer is disposed between the substrate and the conductive layer. The isolation structures are disposed in the substrate between two adjacent trenches, respectively. The first doped regions are disposed in an upper portion of the substrate between each isolation structure and each trench, respectively. The second doped regions are disposed in the substrate under a bottom portion of the trenches, in which each isolation structure is disposed between two adjacent second doped regions.