The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Feb. 07, 2012
Hieu Pham, Santa Clara, CA (US);
Vidyut Gopal, Sunnyvale, CA (US);
Imran Hashim, Saratoga, CA (US);
Dipankar Pramanik, Saratoga, CA (US);
Yun Wang, San Jose, CA (US);
Hong Sheng Yang, Pleasanton, CA (US);
Hieu Pham, Santa Clara, CA (US);
Vidyut Gopal, Sunnyvale, CA (US);
Imran Hashim, Saratoga, CA (US);
Dipankar Pramanik, Saratoga, CA (US);
Yun Wang, San Jose, CA (US);
Hong Sheng Yang, Pleasanton, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Kabushiki Kaisha Toshiba, Tokyo, JP;
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.