The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Jun. 01, 2012
Feng Zhou, Austin, TX (US);
Frank K. Baker, Jr., Austin, TX (US);
Ko-min Chang, Austin, TX (US);
Cheong Min Hong, Austin, TX (US);
Feng Zhou, Austin, TX (US);
Frank K. Baker, Jr., Austin, TX (US);
Ko-Min Chang, Austin, TX (US);
Cheong Min Hong, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A resistive random access memory (ReRAM) cell comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material layer is conducive to the formation of conductive filaments during the application of a filament forming voltage to the cell. The cell includes a second conductive electrode over the dielectric storage material layer and a layer of conductive nanoclusters () including a plurality of nanoclusters in contact with the dielectric storage material layer and in contact with the first conductive electrode or the second conductive electrode.