The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Sep. 23, 2011
Juwen Gao, San Jose, CA (US);
Rajkumar Jakkaraju, Sunnyvale, CA (US);
Michal Danek, Cupertino, CA (US);
Wei Lei, Santa Clara, CA (US);
Juwen Gao, San Jose, CA (US);
Rajkumar Jakkaraju, Sunnyvale, CA (US);
Michal Danek, Cupertino, CA (US);
Wei Lei, Santa Clara, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A method for processing a substrate includes providing a substrate including a metal layer, a dielectric layer arranged on the metal layer, and at least one of a via and a trench formed in the dielectric layer; depositing a metal using chemical vapor deposition (CVD) during a first deposition period, wherein the first deposition period is longer than a first nucleation period that is required to deposit the metal on the metal layer; stopping the first deposition period prior to a second nucleation delay period, wherein the second nucleation period is required to deposit the metal on the dielectric layer; performing the depositing and the stopping N times, where N is an integer greater than or equal to one; and after the performing, depositing the metal using CVD during a second deposition period that is longer than the second nucleation delay period.