The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2014

Filed:

Mar. 17, 2010
Applicants:

Ru-shang Hsiao, Jhubei, TW;

Chung-te Lin, Tainan, TW;

Nai-wen Cheng, Tainan, TW;

Yin-kai Liao, Taipei, TW;

Wei Chuang Wu, Tainan, TW;

Inventors:

Ru-Shang Hsiao, Jhubei, TW;

Chung-Te Lin, Tainan, TW;

Nai-Wen Cheng, Tainan, TW;

Yin-Kai Liao, Taipei, TW;

Wei Chuang Wu, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming an integrated circuit structure includes providing a silicon substrate, and implanting a p-type impurity into the silicon substrate to form a p-type region. After the step of implanting, performing an anneal to form a silicon oxide region, with a portion of the p-type region converted to the silicon oxide region.


Find Patent Forward Citations

Hsiao, Ru-Shang. (2014). Local oxidation of silicon processes with reduced lateral oxidation (U.S. Patent No. 8778717). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8778717

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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