The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Jan. 25, 2013
Keven Yu, Union City, CA (US);
Madhavi Chandrachood, Sunnyvale, CA (US);
Amitabh Sabharwal, San Jose, CA (US);
Ajay Kumar, Cupertino, CA (US);
Keven Yu, Union City, CA (US);
Madhavi Chandrachood, Sunnyvale, CA (US);
Amitabh Sabharwal, San Jose, CA (US);
Ajay Kumar, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus for etching photomasks are provided herein. In one embodiment, a method of etching an ARC layer or an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having an ARC layer or an absorber layer partially exposed through a patterned layer, providing a gas mixture including at least one fluorine containing gas in to a processing chamber, applying a source RF power to form a plasma from the gas mixture, applying a first type of RF bias power to the substrate for a first period of time, applying a second type of RF bias power away from the substrate for a second period of time, and etching the ARC layer or the absorber layer through the patterned layer in the presence of the plasma.