The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2014

Filed:

Feb. 20, 2012
Applicants:

Eiichi Nishimura, Miyagi, JP;

Takashi Sone, Miyagi, JP;

Fumiko Yamashita, Miyagi, JP;

Inventors:

Eiichi Nishimura, Miyagi, JP;

Takashi Sone, Miyagi, JP;

Fumiko Yamashita, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a substrate processing method, a polysilicon layeron a wafer W is etched with a bromine cationand a bromine radicalin plasma generated from a processing gas containing a hydrogen bromide gas, an oxygen gas, and a nitrogen trifluoride gas, and then, is ashed with an oxygen radicaland a nitrogen radicalin plasma generated from a processing gas containing an oxygen gas and a nitrogen gas. Thereafter, the polysilicon layeris etched with a fluorine cationand a fluorine radicalin plasma generated from a processing gas containing an argon gas and a nitrogen trifluoride gas. While the polysilicon layeris ashed, an oxidation process is performed on a silicon bromide generated by etching the polysilicon layerwith the bromine cation


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