The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Aug. 10, 2012
Dong Ha Jung, Pleasanton, CA (US);
Kimihiro Satoh, Beaverton, OR (US);
Jing Zhang, Los Altos, CA (US);
Yuchen Zhou, San Jose, CA (US);
Yiming Huai, Pleasanton, CA (US);
Dong Ha Jung, Pleasanton, CA (US);
Kimihiro Satoh, Beaverton, OR (US);
Jing Zhang, Los Altos, CA (US);
Yuchen Zhou, San Jose, CA (US);
Yiming Huai, Pleasanton, CA (US);
Avalanche Technology Inc., Fremont, CA (US);
Abstract
Use of a multilayer etching mask that includes a stud mask and a removable spacer sleeve for MTJ etching to form a bottom electrode that is wider than the rest of the MTJ pillar is described. The first embodiment of the invention described includes a top electrode and a stud mask. In the second and third embodiments the stud mask is a conductive material and also serves as the top electrode. In embodiments after the stud mask is formed a spacer sleeve is formed around it to initially increase the masking width for a phase of etching. The spacer is removed for further etching, to create step structures that are progressively transferred down into the layers forming the MTJ pillar. In one embodiment the spacer sleeve is formed by net polymer deposition during an etching phase.