The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
May. 26, 2011
Rai-min Huang, Taipei, TW;
Sheng-huei Dai, Taitung County, TW;
Chen-hua Tsai, Hsinchu County, TW;
Duan Quan Liao, Singapore, SG;
Yikun Chen, Singapore, SG;
Xiao Zhong Zhu, Singapore, SG;
Rai-Min Huang, Taipei, TW;
Sheng-Huei Dai, Taitung County, TW;
Chen-Hua Tsai, Hsinchu County, TW;
Duan Quan Liao, Singapore, SG;
Yikun Chen, Singapore, SG;
Xiao Zhong Zhu, Singapore, SG;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A FINFET transistor structure includes a substrate, a fin structure, an insulating layer and a gate structure. The fin structure is disposed on the substrate and directly connected to the substrate. Besides, the fin structure includes a fin conductive layer and a bottle neck. The insulating layer covers the substrate and has a protruding side which is formed by partially surrounding the bottle neck of the fin structure, and a bottom side in direct contact with the substrate so that the protruding side extend to and under the fin structure. The gate structure partially surrounds the fin structure.