The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Oct. 19, 2011
Eduard A. Cartier, New York, NY (US);
Brian J. Greene, Wappingers Falls, NY (US);
Dechao Guo, Fishkill, NY (US);
Gan Wang, Fishkill, NY (US);
Yanfeng Wang, Fishkill, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Eduard A. Cartier, New York, NY (US);
Brian J. Greene, Wappingers Falls, NY (US);
Dechao Guo, Fishkill, NY (US);
Gan Wang, Fishkill, NY (US);
Yanfeng Wang, Fishkill, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide.