The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Jun. 28, 2013
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Shoji Akiyama, Annaka, JP;
Yoshihiro Kubota, Annaka, JP;
Atsuo Ito, Annaka, JP;
Makoto Kawai, Annaka, JP;
Kouichi Tanaka, Annaka, JP;
Yuji Tobisaka, Annaka, JP;
Yoshihiro Nojima, Annaka, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
A method of manufacturing a laminated wafer is provided by forming a silicon film layer on a surface of an insulating substrate comprising the steps in the following order of: applying a surface activation treatment to both a surface of a silicon wafer or a silicon wafer to which an oxide film is layered and a surface of the insulating substrate followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer at a temperature of 200° C. to 350° C., and thinning the silicon wafer by a combination of grinding, etching and polishing to form a silicon film layer.