The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2014

Filed:

Apr. 13, 2012
Applicants:

Ichiro Nakayama, Osaka, JP;

Tsuyoshi Nomura, Kyoto, JP;

Tomohiro Okumura, Osaka, JP;

Mitsuo Saitoh, Osaka, JP;

Hiroshi Tanabe, Nara, JP;

Yukiya Usui, Osaka, JP;

Inventors:

Ichiro Nakayama, Osaka, JP;

Tsuyoshi Nomura, Kyoto, JP;

Tomohiro Okumura, Osaka, JP;

Mitsuo Saitoh, Osaka, JP;

Hiroshi Tanabe, Nara, JP;

Yukiya Usui, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/0236 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/1804 (2013.01); H01L 31/022458 (2013.01); H01L 31/1892 (2013.01); H01L 31/02363 (2013.01); H01L 31/068 (2013.01); Y02E 10/547 (2013.01); H01L 31/02245 (2013.01);
Abstract

The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.


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