The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Mar. 01, 2012
Chao-wei Tseng, Jhonghe, TW;
Kun-ming Huang, Taipei, TW;
Cheng-chi Chuang, Zhonghe, TW;
Fu-hsiung Yang, Zhongli, TW;
Chao-Wei Tseng, Jhonghe, TW;
Kun-Ming Huang, Taipei, TW;
Cheng-Chi Chuang, Zhonghe, TW;
Fu-Hsiung Yang, Zhongli, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A high voltage MOS transistor comprises a first drain/source region formed over a substrate, a second drain/source region formed over the substrate and a first metal layer formed over the substrate. The first metal layer comprises a first conductor coupled to the first drain/source region through a first metal plug, a second conductor coupled to the second drain/source region through a second metal plug and a plurality of floating metal rings formed between the first conductor and the second conductor. The floating metal rings help to improve the breakdown voltage of the high voltage MOS transistor.