The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8766259 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 01, 2014

Filed:

Feb. 01, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Renee T. Mo, Briarcliff Manor, NY (US);

Oliver D. Patterson, Poughkeepsie, NY (US);

Xing Zhou, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor structure including a test structure for detection of a gap in a conductive layer of the semiconductor structure includes a semiconductor substrate; the test structure, the test structure being located on the semiconductor substrate, the test structure comprising a multilayer gate stack, wherein the multilayer gate stack includes a single conductive layer region including: a gate dielectric located on the semiconductor substrate; the conductive layer located on the gate dielectric; and an undoped amorphous silicon layer located on the conductive layer; and wherein the test structure is configured to detect the presence of the gap in the conductive layer.


Find Patent Forward Citations

Mo, Renee. (2014). Test structure for detection of gap in conductive layer of multilayer gate stack (U.S. Patent No. 8766259). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8766259

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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